منابع مشابه
AlGaN/GaN MODFET Device for High Temperature Applications
The objective of this paper is to investigate the feasibility and explore the potential of GaN-based devices for high temperature applications. An analytical temperature model based on modified charge control model is developed for the proposed device. The major tasks of this paper include the establishment of the compact model including the thermal effects and the validation of the analytical ...
متن کاملA Novel GaN Device with Thin AlGaN/GaN Heterostructure for High-power Applications
We have reported the results of prototyping an inverter as one of the GaN-based power supplies. The inverter comprised a DC converter circuit and AC inverter circuit, and the operating output power was 50 W, reaching a maximum power of 200 W 6) . However, the devices used in these inverters were of the normally-on type. In this work, normally-off type devices were fabricated making full use of ...
متن کاملGaN Device for Highly Efficient Power Amplifiers
Fujitsu has been developing gallium nitride high electron mobility transistors (GaNHEMT) for small transmitter amplifiers for Long Term Evolution (LTE) base stations. The use of GaN-HEMT in highly efficient transmitter amplifiers has attracted much attention because of its high breakdown voltage characteristics. High-efficiency amplifiers with high gain are needed to decrease the power consumpt...
متن کاملGaN HEMTs for Power Switching Applications: from Device to System-Level Electro-Thermal Modeling
While still expanding in the microwave arena, GaNbased HEMTs are increasingly making their way into the field of high-power switching thanks to the material’s advantages in terms of power handling and switching frequency capabilities [1]-[6]. Since high-power applications demand particularly strenuous attention to thermal considerations, thermal modeling of GaN-HEMTs has attracted more and more...
متن کاملUtilization of native oxygen in Eu(RE)-doped GaN for enabling device compatibility in optoelectronic applications
The detrimental influence of oxygen on the performance and reliability of V/III nitride based devices is well known. However, the influence of oxygen on the nature of the incorporation of other co-dopants, such as rare earth ions, has been largely overlooked in GaN. Here, we report the first comprehensive study of the critical role that oxygen has on Eu in GaN, as well as atomic scale observati...
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ژورنال
عنوان ژورنال: MRS Internet Journal of Nitride Semiconductor Research
سال: 1999
ISSN: 1092-5783
DOI: 10.1557/s1092578300003562